TIP42/TIP42a/TIP42b/TIP42c ? pn p epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com TIP42/TIP42a/TIP42b/TIP42c rev. b0 1 december 2009 TIP42/TIP42a/TIP42b/TIP42c pnp epitaxial silicon transistor features ? medium power linear switching applications ? complement to tip41/tip41a/tip41b/tip41c absolute maximum ratings t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage : TIP42 : TIP42a : TIP42b : TIP42c - 40 - 60 - 80 - 100 v v v v v ceo collector-emitter voltage : TIP42 : TIP42a : TIP42b : TIP42c - 40 - 60 - 80 - 100 v v v v v ebo emitter-base voltage - 5 v i c collector current (dc) - 6 a i cp collector current (pulse) -10 a i b base current -2 a p c collector dissipation (t c =25 c) 65 w collector dissipation (t a =25 c) 2 w t j junction temperature 150 c t stg storage temperature - 65 to 150 c 1.base 2.collector 3.emitter 1 to-220
TIP42/TIP42a/TIP42b/TIP42c ? pn p epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com TIP42/TIP42a/TIP42b/TIP42c rev. b0 2 electrical characteristics t a =25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter test condition min. max. units v ceo (sus) * collector-emitter sustaining voltage : TIP42 : TIP42a : TIP42b : TIP42c i c = -30ma, i b = 0 -40 -60 -80 -100 v v v v i ceo collector cut-off current : TIP42/42a : TIP42b/42c v ce = -30v, i b = 0 v ce = -60v, i b = 0 -0.7 -0.7 ma ma i ces collector cut-off current : TIP42 : TIP42a : TIP42b : TIP42c v ce = -40v, v eb = 0 v ce = -60v, v eb = 0 v ce = -80v, v eb = 0 v ce = -100v, v eb = 0 -400 -400 -400 -400 a a a a i ebo emitter cut-off current v eb = -5v, i c = 0 -1 ma h fe * dc current gain v ce = -4v, i c = -0.3a v ce = -4v, i c = -3a 30 15 75 v ce (sat) * collector-emitter saturation voltage i c = -6a, i b = -600ma -1.5 v v be (sat) * base-emitter saturation voltage v ce = -4v, i c = -6a -2.0 v f t current gain bandwidth product v ce = -10v, i c = -500ma, f = 1mhz 3.0 mhz
TIP42/TIP42a/TIP42b/TIP42c ? pn p epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com TIP42/TIP42a/TIP42b/TIP42c rev. b0 3 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. safe operating area figure 4. power derating -0.01 -0.1 -1 -10 1 10 100 1000 v ce = -4v h fe , dc current gain i c [a], collector current -0.01 -0.1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 i c /i b = 10 v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current -1 -10 -100 -0.1 -1 -10 -100 TIP42c TIP42b TIP42a TIP42 i c (max) (dc) i c (max) (pulse) 5 m s 1 m s 0 . 5 m s i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 100 p c [w], power dissipation t c [ o c], case temperature
TIP42/TIP42a/TIP42b/TIP42c ? pn p epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com TIP42/TIP42a/TIP42b/TIP42c rev. b0 4 mechanical dimensions to-220 dimensions in millimeters
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